FW-GANT-004
Gallium Nitride (GaN) Templates
Key Specifications
| Chemical formula | GaN |
| Diameter (inch) | 2″ |
| Thickness (um) | 15, 20, 30, 40 |
| Conduction Type | N-type |
| Orientation | C-axis (0001) |
Related products
FW-KTP-009
FW-KTP-009Potassium Titanyl Phosphate (KTP) crystal, optical grade.
Key Specifications
| Chemical Formula | KTP |
| Transparency (um) | 0.35 – 4.50 |
| Melting Point (C) | 1150 |
| d33 (pm/V) | 10.7 |
| d32 (pm/V) | 2.65 |
FW-SILW-002
FW-SILW-002High purity silicon wafers/substrates
Key Specifications
| Material | Silicon |
| Diameter (inch) | 2, 4, 6 |
| Thickness (um) | 275, 525, 675 |
| Orientation | (100) (111) (110) |
| Type | N or P |
FW-GANS-003
FW-GANS-003Gallium Nitride (GaN) Substrates.
Key Specifications
| Chemical formula | GaN |
| Diameter (inch) | 2″ |
| Thickness (um) | 350 |
| Conduction Type | N-type |
| Orientation | C-axis (0001) |
FW-TEO2-006
FW-TEO2-006Tellurium dioxide (TeO2) crystal with high-quality factor and transparent in the 0.33um to 5um spectral range.
Key Specifications
| Chemical formula | TeO2 |
| Density (g/cm2) | 6 |
| Melting Point (C) | 733 |
| Transparent Wavelength (um) | 0.33 – 5.0 |
| Transmittance @632.8nm | >70% |