FW-GANS-003
Gallium Nitride (GaN) Substrates.
Key Specifications
| Chemical formula | GaN |
| Diameter (inch) | 2″ |
| Thickness (um) | 350 |
| Conduction Type | N-type |
| Orientation | C-axis (0001) |
Related products
FW-SAPP-001
FW-SAPP-001Sapphire (Al2O3) high purity wafers/substrates
Key Specifications
| Chemical formula | Al2O3 |
| Diameter (inch) | 2, 4, 6 |
| Thickness (um) | 430, 650, 1200 |
| Purity (%) | 99.996 |
| Orientation | C to M |
FW-TEO2-006
FW-TEO2-006Tellurium dioxide (TeO2) crystal with high-quality factor and transparent in the 0.33um to 5um spectral range.
Key Specifications
| Chemical formula | TeO2 |
| Density (g/cm2) | 6 |
| Melting Point (C) | 733 |
| Transparent Wavelength (um) | 0.33 – 5.0 |
| Transmittance @632.8nm | >70% |
FW-LT-008
FW-LT-008Lithium Tantalate (LiTaO3) Crystals, optical grade.
Key Specifications
| Chemical formula | LiTaO3 |
| Transparency (um) | 0.4 – 5.0 |
| Density (g/cm3) | 7.45 |
| Melting Point (C) | 1650 |
| Moh's Hardness | 5.5-6 |
FW-KTP-009
FW-KTP-009Potassium Titanyl Phosphate (KTP) crystal, optical grade.
Key Specifications
| Chemical Formula | KTP |
| Transparency (um) | 0.35 – 4.50 |
| Melting Point (C) | 1150 |
| d33 (pm/V) | 10.7 |
| d32 (pm/V) | 2.65 |